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Ghosh, K. K.
- Ultra-Thin Gate Oxide Tunneling in MOS Transistors: A Simulation Study by Minimos
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Authors
D. Ghosal
1,
K. K. Ghosh
1
Affiliations
1 SRC Institute of Engineering and Management, Salt Lake, Kolkata, IN
1 SRC Institute of Engineering and Management, Salt Lake, Kolkata, IN
Source
Journal of Scientific and Technical Research (Sharda University, Noida), Vol 4, No 1 (2014), Pagination: 8-13Abstract
Constant downscaling of gate oxide thickness in present state of art technology in MOS has motivated interest in the eventual tunneling that seriously limits and warns the faithful performance of MOS. In the present paper, with help of existing tunneling models of two very important gate leakage currents like Fowler-Nordheim and Direct tunnel such leakage are successfully simulated by Minimos-NT simulator under different conditions of gate and drain biases and verified the results with the experimental results.Keywords
Saponification, Comparative, Physio Chemical Parameters, Trace Metals, Heavy Metals, Oil Samples.- Quantized Conductance in Graphene Based Coherent Nano-Structures
Abstract Views :160 |
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Authors
Affiliations
1 Institute of Engineering and Management, Sector V, Saltlake, Kolkata-700091, IN
1 Institute of Engineering and Management, Sector V, Saltlake, Kolkata-700091, IN